Jesús del Alamo

Jesús del Alamo is the Donner Professor of Science in MIT’s Department of Electrical Engineering and Computer Science. His research focuses on transistors and other semiconductor devices. He has worked on silicon solar cells, Si Bipolar Junction Transistors, Si Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), SiGe heterostructure devices, GaAs Pseudomorphic High Electron Mobility Transistors (PHEMTs), InGaAs High Electron Mobility Transistors (HEMTs) and MOSFETs, InGaSb HEMTs, GaN HEMTs and MOSFETs, and more recently Diamond MOSFETs. He has also investigated quantum-effect devices based on AlGaAs/GaAs heterostructures. His current research interests include the physics, technology, modeling and reliability of new III-V compound semiconductor field-effect transistors for future logic, high-frequency and power applications. He is also interested in fundamental reliability physics of GaN transistors for RF power amplification and power switching applications, as well as novel devices for analog computing.

Before coming to MIT, del Alamo worked on compound semiconductor electronics at NTT LSI Laboratories in Japan, and silicon photovoltaics at the Institute of Solar Energy of Polytechnic University of Madrid. Among his awards are the Louis D. Smullin Award for Excellence in Teaching and Amar Bose Award for Excellence in Teaching, the Intel Outstanding Researcher Award, the Semiconductor Research Corporation Technical Excellence Award and the Semiconductor Industry Association-Semiconductor Research Corporation University Researcher Award. He earned an MS and PhD from Stanford University.